BUK444 PDF

Dt Sheet. UNIT - - 4. Normalised power dissipation. Transient thermal impedance. Normalised continuous drain current.

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Philips Semiconductors. Product Specification. PowerMOS transistor. N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. Drain-source voltage. Drain current DC. Total power dissipation. DS ON. Drain-source on-state resistance. Drain-source voltage Drain-gate voltage Gate-source voltage. V DGR. Drain current pulse peak value.

P tot. Storage temperature Junction Temperature. R th j-hs. Thermal resistance junction to heatsink Thermal resistance junction to ambient. R th j-a. April Rev 1. BR DSS. Drain-source breakdown voltage. GS TO. Gate threshold voltage Zero gate voltage drain current Zero gate voltage drain current Gate source leakage current. Forward transconductance.

Input capacitance. Output capacitance. Feedback capacitance. Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time. Internal drain inductance.

Measured from drain lead 6 mm from package to centre of die Measured from source lead 6 mm from package to source bond pad. Internal source inductance. Repetitive peak voltage from all three terminals to external heatsink. Capacitance from T2 to external heatsink. Continuous reverse drain current Pulsed reverse drain current. Diode forward voltage. Reverse recovery time.

Reverse recovery charge. Drain-source non-repetitive unclamped inductive turn-off energy. Observe the general handling precautions for electrostatic-discharge sensitive devices ESDs to prevent damage to MOS gate oxide. Refer to mounting instructions for F-pack envelopes. Data sheet status. Objective specification. This data sheet contains target or goal specifications for product development.

Preliminary specification. This data sheet contains preliminary data; supplementary data may be published later. Product specification. This data sheet contains final product specifications. Limiting values. Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied.

Exposure to limiting values for extended periods may affect device reliability. Application information. Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N. All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice.

No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury.

Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

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Philips Semiconductors. Product Specification. PowerMOS transistor. N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. Drain-source voltage. Drain current DC. Total power dissipation.

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