IRFP260 DATASHEET PDF

Vishay Siliconix. Q g Max. Q gs nC. Q gd nC.

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It also provides greater creepage distance between pins to meet the requirements of most safety specifications. Repetitive rating; pulse width limited by maximum junction temperature see fig. B, Mar www. Vishay Siliconix. Q g Max. Q gs nC. Q gd nC. The TOAC package is preferred for. It also. Lead Pb -free. Drain-Source Voltage. Gate-Source Voltage. Continuous Drain Current. Pulsed Drain Current a.

Linear Derating Factor. Single Pulse Avalanche Energy b. Repetitive Avalanche Current a. Repetitive Avalanche Energy a.

Maximum Power Dissipation. Operating Junction and Storage Temperature Range. Soldering Recommendations Peak Temperature. Mounting Torque. Document Number: B, Mar This datasheet is subject to change without notice. No Preview Available! Maximum Junction-to-Ambient. Case-to-Sink, Flat, Greased Surface. R thJA. R thCS. Maximum Junction-to-Case Drain. R thJC. Drain-Source Breakdown Voltage.

V DS Temperature Coefficient. Gate-Source Threshold Voltage. Gate-Source Leakage. Zero Gate Voltage Drain Current. Drain-Source On-State Resistance. Forward Transconductance. V GS th. I GSS. I DSS. R DS on. Input Capacitance. Output Capacitance. Reverse Transfer Capacitance. Total Gate Charge.

Gate-Source Charge. Gate-Drain Charge. Turn-On Delay Time. Rise Time. Turn-Off Delay Time. Fall Time. Internal Drain Inductance. Internal Source Inductance. C iss. C oss. C rss. Between lead,. Drain-Source Body Diode Characteristics.

Pulsed Diode Forward Current a. I SM p - n junction diode. Body Diode Voltage. Body Diode Reverse Recovery Time. Body Diode Reverse Recovery Charge. Forward Turn-On Time. Vishay Intertechnology Electronic Components Datasheet.

Part Number. View PDF for Mobile. IXYS Corporation. International Rectifier. Site map. Contact us. Buy Components. Privacy Policy.

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